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参数资料
| 型号： | 2SC3265-Y |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 177K |
| 代理商： | 2SC3265-Y |
2SC3265
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3265
Low Frequency Power Amplifier Applications
Power Switching Applications
High DC current gain: hFE (1) = 100~320
Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
Complementary to 2SA1298
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
25
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
5
V
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
100
320
DC current gain
hFE (2)
VCE = 1 V, IC = 800 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 20 mA
0.4
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3265Y | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3265O | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3265Y | 800 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3266-GR | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3266-Y | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3265-Y(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR - Tape and Reel 制造商:Toshiba 功能描述:NPN |
| 2SC3265-Y(TE85R,F) | 制造商:Toshiba 功能描述:SMALL-SIGNAL TRANSISTOR |
| 2SC3265-Y,LF | 功能描述:TRANS NPN 25V 0.8A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:800mA 电压 - 集射极击穿（最大值）:25V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:400mV @ 20mA，500mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:160 @ 100mA，1V 功率 - 最大值:200mW 频率 - 跃迁:120MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:TO-236 标准包装:1 |
| 2SC3265YTE85L | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Low Frequency Power Amplifier Applications Power Switching Applications |
| 2SC3266 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-92 30V .2A .75W ECB |
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