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参数资料
| 型号： | 2SC3267-BL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 388K |
| 代理商： | 2SC3267-BL |
2SC3267
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3267
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
Complementary to 2SA1297
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
6
V
hFE (1)
(Note)
VCE = 2 V, IC = 100 mA
120
700
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
75
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.1 A
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.1 A
0.85
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3267GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | SPAK |
| 2SC3267-GR(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC3267Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | SPAK |
| 2SC3267-Y(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC3268 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
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