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参数资料
| 型号： | 2SC3307 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-21F1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 186K |
| 代理商： | 2SC3307 |
2SC3307
2006-11-09
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 800 V, IE = 0
―
100
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
1
mA
Collector-base breakdown voltage
V (BR) CEO
IC = 1 mA, IE = 0
900
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
800
―
V
hFE (1)
VCE = 5 V, IC = 10 mA
10
―
DC current gain
hFE (2)
VCE = 5 V, IC = 5 A
10
―
Collector-emitter saturation voltage
VCE (sat)
IC = 5 A, IB = 1 A
―
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 5 A, IB = 1 A
―
1.5
V
Rise time
tr
―
1.0
Storage time
tstg
―
3.0
Switching time
Fall time
tf
IB1 = IB2 = 0.4 A, duty cycle ≤ 1%
―
1.0
s
Marking
I B1
20 s
VCC ≈ 400 V
I B2
Output
400
IB2
IB1
Input
IC = 1 A
2SC3307
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3307(Z,F) | 制造商:Toshiba 功能描述:NPN 800V 10A 10 TO3P(L) Bulk 制造商:Toshiba 功能描述:Trans GP BJT NPN 800V 10A 3-Pin(3+Tab) TO-3PL |
| 2SC3307_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications |
| 2SC3308 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SC3309 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC3310 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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