参数资料
型号: 2SC3326-A
元件分类: 小信号晶体管
英文描述: 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封装: 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN
文件页数: 1/5页
文件大小: 512K
代理商: 2SC3326-A
2SC3326
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
High emitter-base voltage: VEBO = 25 V (min)
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA)
Low on resistance: RON = 1 (typ.) (IB = 5 mA)
High DC current gain: hFE = 200~1200
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
相关PDF资料
PDF描述
2SC3326-B 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SC3326 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SC3327-B 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3327 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3327-A 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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