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参数资料
| 型号： | 2SC3356-R26 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/8页 |
| 文件大小： | 91K |
| 代理商： | 2SC3356-R26 |
DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1.0 V, IC = 0
DC Current Gain
hFE*
50
120
300
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
7
GHz
VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Cre**
0.55
1.0
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11.5
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
*
Pulse Measurement PW
350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R23/Q *
R24/R *
R25/S *
Marking
R23
R24
R25
hFE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1
to
1.4
0
to
0.1
0.95
0.3
0.95
0.4
+0.1
0.05
0.4
+0.1
0.05
0.16
+0.1
0.06
0.65
+0.1
0.15
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| 2SC3365-E | 10 A, 400 V, NPN, Si, POWER TRANSISTOR |
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| 2SC3382T | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3356S | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SC3356-T1B | 制造商:NEC Electronics Corporation 功能描述: 制造商:NEC Electronics Corporation 功能描述:2SC3356-T1B |
| 2SC3356-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:RF TRANSISTOR 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,MiniMold3 制造商:Renesas 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Mini-Mold T/R |
| 2SC3356-T1B-A (S) | 制造商:Renesas Electronics Corporation 功能描述:REN2SC3356-T1B-A (S) NPN SMALL SIGNAL LN |
| 2SC3356-T1B-A(Q) | 制造商:Renesas Electronics 功能描述:NPN |
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