参数资料
型号: 2SC3356L-B-AE3-R
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: LEAD FREE PACKAGE-3
文件页数: 2/4页
文件大小: 206K
代理商: 2SC3356L-B-AE3-R
2SC3356
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-024,E
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
BVCEO
12
V
Emitter to Base Voltage
BVEBO
3
V
Collector Current
IC
100
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-65~ +150
°С
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Cut-Off Current
ICBO
VCB =10V,IE =0
1.0
μA
Emitter-Base Cut-Off Current
IEBO
VEB =1 V, IC=0
1.0
μA
DC Current Gain
hFE
VCE =10 V, IC =20 mA
50
300
Gain Bandwidth Product
fT
VCE =10 V, IC =20 mA
7
GHz
Feed-Back Capacitance
CRE
VCB =10 V, IE =0, f =1.0MHz
1.0
pF
Noise Figure
NF
VCE =10 V, IC =7mA, f =1.0GHz
2.0
dB
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
50-160
160-240
240-300
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