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参数资料
| 型号： | 2SC3357-RF-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | POWER, MINIMOLD PACKAGE-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 86K |
| 代理商： | 2SC3357-RF-A |
Data Sheet PU10211EJ01V0DS
2
2SC3357
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction to Ambient Resistance
Rth (j-a)
Note
62.5
°C/W
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
–
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
–
1.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 20 mA
50
120
250
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
–
6.5
–
GHz
Insertion Power Gain
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
–
9.0
–
dB
Noise Figure (1)
NF
VCE = 10 V, IC = 7 mA, f = 1 GHz
–
1.1
–
dB
Noise Figure (2)
NF
VCE = 10 V, IC = 40 mA, f = 1 GHz
–
1.8
3.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 10 V, IE = 0 mA, f = 1 MHz
–
0.65
1.0
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
hFE CLASSIFICATION
Rank
RH
RF
RE
Marking
RH
RF
RE
hFE Value
50 to 100
80 to 160
125 to 250
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3357RH | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC3357-T1 | 制造商:NEC Electronics Corporation 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,P-MiniMold3 制造商:Renesas 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR |
| 2SC3357-T1-A-RE | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-A-RF | 制造商:Renesas Electronics Corporation 功能描述: |
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