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参数资料
| 型号： | 2SC3357-RH |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | POWER, MINIMOLD PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 86K |
| 代理商： | 2SC3357-RH |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1985, 2003
FEATURES
Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate)
Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3357
25 pcs (Non reel)
12 mm wide embossed taping
2SC3357-T1
1 kpcs/reel
Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
1.2
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate
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| 2SC3359STPQ | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3359STP/Q | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3360-T1BN17 | 100 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3360-T2BN15 | 100 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3360-L | 100 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3357-T1 | 制造商:NEC Electronics Corporation 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,P-MiniMold3 制造商:Renesas 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR |
| 2SC3357-T1-A-RE | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-A-RF | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-RF-A | 功能描述:SAME AS NE85634 NPN SILICON MEDI 制造商:cel 系列:- 包装:带卷（TR） 零件状态:新产品 晶体管类型:NPN 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:6.5GHz 噪声系数（dB，不同 f 时的典型值）:1.8dB @ 1GHz 增益:10dB 功率 - 最大值:1.2W 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，10V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1,000 |
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