参数资料
型号: 2SC3357-T1RF
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: POWER, MINIMOLD PACKAGE-3
文件页数: 7/10页
文件大小: 211K
代理商: 2SC3357-T1RF
Data Sheet PU10211EJ01V0DS
4
2SC3357
90
100
80
70
60
40
50
30
20
30
40
50
60
70
Collector Current IC (mA)
IM2, IM3 vs. COLLECTOR CURRENT
2nd
Order
Intermodulation
Distortion
IM
2(dBc)
3rd
Order
Intermodulation
Distortion
IM
3(dBc)
IM2
IM3
VCE = 10 V
Vo = 100 dB V/50
Rg = Re = 50
IM2 : f = 90 + 100 MHz
IM3 : f = 2 × 200 – 190 MHz
7
0
1
2
3
4
5
6
0.5
1
5
10
50 70
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise
Figure
NF
(dB)
VCE = 10 V
f = 1 GHz
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→ [Device Parameters]
URL http://www.csd-nec.com/
相关PDF资料
PDF描述
2SC3357-T1RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-T1RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-T1RE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-T1RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC3357-T1-RF-A 功能描述:SAME AS NE85634 NPN SILICON MEDI 制造商:cel 系列:- 包装:带卷(TR) 零件状态:新产品 晶体管类型:NPN 电压 - 集射极击穿(最大值):12V 频率 - 跃迁:6.5GHz 噪声系数(dB,不同 f 时的典型值):1.8dB @ 1GHz 增益:10dB 功率 - 最大值:1.2W 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):50 @ 20mA,10V 电流 - 集电极(Ic)(最大值):100mA 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:SOT-89 标准包装:1,000
2SC3357-T2 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SC3357-TI 制造商:UNKNOWN 功能描述:2SC3357-TI
2SC3358 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2SC3359 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9280V .3A .4W ECB