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参数资料
| 型号： | 2SC3380 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | UPAK-3 |
| 文件页数： | 5/7页 |
| 文件大小： | 76K |
| 代理商： | 2SC3380 |
2SC3380
Rev.3.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
0.4
0.8
1.2
50
Ambient Temperature Ta (°C)
Collector
Power
Dissipation
P
C
(W)
(on
the
alumina
ceramic
board)
Maximum Collector Dissipation Curve
100
150
0
0.2
0.6
0.4
0.8
1.0
0.4
0.8
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics
1.2
1.6
2.0
IB = 0
2
A
4
8
9
10
12
14
0
10
30
20
40
50
0.2
0.4
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
VCE = 20 V
Ta = 25
°C
10
30
100
13
10
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
30
100
Pulse
Ta = 25
°C
VCE = 20 V
10 V
0.1
3
1.0
0.3
10
13
10
Collector Current IC (mA)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
30
100
Pulse
IC = 10 IB
Ta = 25
°C
0
60
40
20
100
80
0.5
1.0
2
5
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
10
20
50
Pulse
VCE = 20 V
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| 2SC3391BRF | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3380ASTR-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Triple Diffused |
| 2SC3381 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS) |
| 2SC3381BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 80V V(BR)CEO | 100MA I(C) | ZIP |
| 2SC3381GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 80V V(BR)CEO | 100MA I(C) | ZIP |
| 2SC3382 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9260V .2A .5W ECB |
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