参数资料
型号: 2SC3419-Y
元件分类: 功率晶体管
英文描述: 0.8 A, 40 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-8H1A, 3 PIN
文件页数: 1/4页
文件大小: 136K
代理商: 2SC3419-Y
2SC3419
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3419
Medium-Power Amplifier Applications.
Low saturation voltage: VCE (sat) = 0.25 V (typ.)
(IC = 500 mA, IB = 50 mA)
High collector power dissipation: PC = 1.2 W (Ta = 25°C)
Complementary to 2SA1356
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
80
mA
Ta = 25°C
1.2
Collector power
dissipation
Tc = 25°C
PC
5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相关PDF资料
PDF描述
2SC3420-BL 5 A, 20 V, NPN, Si, POWER TRANSISTOR
2SC3420Y 5 A, 20 V, NPN, Si, POWER TRANSISTOR
2SC3421-O 1 A, 120 V, NPN, Si, POWER TRANSISTOR
2SC3421 1 A, 120 V, NPN, Si, POWER TRANSISTOR
2SC3422-Y 3 A, 40 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SC3419-Y(Q) 制造商:Toshiba 功能描述:NPN Bulk
2SC3420-GR(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 20V 5A 3-Pin TO-126IS
2SC3420-Y(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC3421 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC3421-O(Q) 制造商:Toshiba America Electronic Components 功能描述: