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参数资料
| 型号： | 2SC3422O |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶体管|晶体管|叩| 40V的五（巴西）总裁| 3A条一（c）|至126 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SC3422O |
2SC3413
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
40
V
Collector to emitter voltage
30
V
Emitter to base voltage
5
V
Collector current
100
mA
Collector power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
40
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
BE
V
CE(sat)
—
—
0.5
μ
A
μ
A
V
CB
= 18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
Emitter cutoff current
—
—
0.5
DC current transfer ratio
100
—
500
Base to emitter voltage
—
—
0.75
V
Collector to emitter saturation
voltage
—
—
0.2
V
Gain bandwidth product
f
T
Cob
—
200
—
MHz
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
= 0.1 mA,
R
g
= 1 k
, f = 1 kHz
Collector output capacitance
—
—
3.5
pF
Noise figure
NF
—
1.0
5.0
dB
Note:
B
1. The 2SC3413 is grouped by h
FE
as follows.
C
D
100 to 200
160 to 320
250 to 500
See characteristic curves of 2SC458(LG).
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3422Y | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 3A I(C) | TO-126 |
| 2SC3423O | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3423Y | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SC3424 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC3437O | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | SC-59 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3422-Y(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC3423-O(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 150V 0.05A 3-Pin TO-126IS |
| 2SC3423-Y(Q) | 功能描述:两极晶体管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3425(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 400V 0.8A 3-Pin TO-126IS |
| 2SC3430 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MP-40500V 2A 20W BCEC |
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