- 您现在的位置：买卖IC网 > PDF目录33373 > 2SC3495 50 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2SC3495 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 28K |
| 代理商： | 2SC3495 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN1430B
2SC3495
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61004TN (PC)/N1098HA (KT)/6140MO/4237AT/D174MY, TS No.1430–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2003A
[2SC3495]
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Applications
AF amplifier, various driver, muting circuit.
Features
Adoption of FBET process.
High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Small Cob (Cob=1.8pF typ).
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
2
1V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
1V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
5
1V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
0
5A
m
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
0
1A
m
t
n
e
r
u
C
e
s
a
BIB
0
1A
m
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
5W
m
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
8
=
E 0
=1
.
0A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
0
1
=
C 0
=1
.
0A
n
i
a
G
t
n
e
r
u
C
D
h E
F
V E
C
I
,
V
5
=
C
A
m
0
1
=
0
50
0
10
0
2
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
0
1
=
C
A
m
0
1
=
0
7
1z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
OC b
o
V B
C
z
H
M
1
=
f
,
V
0
1
=
8
.
1F
p
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
4.0
0.44
1.3
12
3
Continued on next page.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3503-C | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SA1381-D | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1381-F | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC3503 | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SA1381 | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3496 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC350 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92 |
| 2SC3503CSTU | 功能描述:两极晶体管 - BJT NPN 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3503DSTU | 功能描述:两极晶体管 - BJT NPN 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3503ESTU | 功能描述:两极晶体管 - BJT NPN 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。