参数资料
型号: 2SC3515-R
元件分类: 小信号晶体管
英文描述: 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN
文件页数: 1/5页
文件大小: 222K
代理商: 2SC3515-R
2SC3515
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 3 pF (typ.)
Complementary to 2SA1384
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
100
mA
Base current
IB
20
mA
PC
500
Collector power dissipation
PC
(Note 1)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm
2 × 0.8 mmt)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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