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参数资料
| 型号： | 2SC3518L-Z |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252VAR |
| 中文描述： | 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|至252VAR |
| 文件页数： | 1/3页 |
| 文件大小： | 77K |
| 代理商： | 2SC3518L-Z |
Transistors
2SC3526H
Silicon NPN epitaxial planar type
1
Publication date: February 2003
SJC00133BED
For display video output
■
Features
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
Wide current range
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CER
110
V
Collector-emitter voltage
(Resistor between B and E)
100
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
50
V
Emitter-base voltage (Collector open)
3.5
V
Collector current
I
C
150
mA
Peak collector current
I
CP
P
C
300
mA
Collector power dissipation
1
W
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Resistor
between B and E)
V
CBO
V
CER
I
C
=
100
μ
A, I
E
=
0
I
C
=
500
μ
A, R
BE
=
470
110
V
100
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
1 mA, I
B
=
0
I
E
=
100
μ
A, I
C
=
0
V
CE
=
35 V, I
B
=
0
V
CE
=
5 V, I
C
=
100 mA
I
C
=
150 mA, I
B
=
15 mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
110 mA, f
=
200 MHz
V
CB
=
30 V, I
E
=
0, f
=
1 MHz
50
V
Emitter-base voltage (Collector open)
V
EBO
3.5
V
Collector-emitter cutoff current (Base open)
I
CEO
h
FE
10
μ
A
Forward current transfer ratio
20
Collector-emitter saturation voltage
V
CE(sat)
0.5
V
Transition frequency
f
T1
f
T2
C
ob
300
MHz
350
Collector output capacitance
(Common base, input open circuited)
3
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
5.9
±
0.2
0.7
±
0.1
4.9
±
0.2
8
±
0
0
+
–
1
±
0
2.54
±
0.15
(
(1.27)
(1.27)
0.45
+0.2
0.45
+0.2
1
3
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3518-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-252 |
| 2SC3518-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:SILICON POWER TRANSISTOR |
| 2SC3519 | 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 160V 15A TO3P 制造商:Allegro MicroSystems 功能描述:TRANSISTOR NPN TO-3P 制造商:Allegro MicroSystems 功能描述:TRANSISTOR, NPN, TO-3P 制造商:Allegro MicroSystems 功能描述:TRANSISTOR, BJT, NPN, 160V, 15A, TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:130W; DC Collector Current:15A; DC Current Gain hFE:50; No. of Pins:3 |
| 2SC3519 | 制造商:Allegro MicroSystems 功能描述:TRANSISTOR NPN TO-3P |
| 2SC3519A | 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN AUDIO/GP MT-100 TO-3P |
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