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参数资料
| 型号： | 2SC3569 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 128K |
| 代理商： | 2SC3569 |
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1998
Document No. D16187EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC3569
NPN
SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-
VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC3569 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
VCE(sat) = 1.0 V MAX. (@ 0.7 A)
Fast switching speed:
tf
≤ 1.0
s MAX. (@ 0.7 A)
Wide base reverse-bias SOA:
VCEX(SUS) = 450 V MIN. (@ 0.5 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
2.0
A
Collector current (pulse)
IC(pulse)*4.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Tc = 25
°C)
15
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3569-L | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 2SC3569-K | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
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| 2N5486RLRM | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3569-AZ(K) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3569-AZ-M | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3570 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC3570K | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 400V 5A 3-Pin(3+Tab) TO-220 Isolated |
| 2SC3571-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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