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参数资料
| 型号： | 2SC3576 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPA, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 30K |
| 代理商： | 2SC3576 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:ENN1799D
2SC3576
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61004TN (PC)/N2098HA (KT)/6140MO/4227KI/N275KI/3D185KI, TS No.1799–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2033A
[2SC3576]
Applications
LF general-purpose amplifiers, various drivers,
muting circuit.
Features
Adoption of FBET process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
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Continued on next page.
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