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| 型号： | 2SC3583-R35 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/8页 |
| 文件大小： | 92K |
| 代理商： | 2SC3583-R35 |
DATA SHEET
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF
1.2 dB TYP.
@f = 1.0 GHz
Ga
13 dB TYP.
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IE = 0
DC Current Gain
hFE *
50
100
250
VCE = 8 V, IC = 20 mA
Gain Bandwidth Product
fT
9
GHz
VCE = 8 V, IC = 20 mA
Feed-Back Capacitance
Cre **
0.35
0.9
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11
13
dB
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
15
dB
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.5
dB
VCE = 8 V, IE = 7 mA, f = 1.0 GHz
*
Pulse Measurement PW
350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R33/Q *
R34/R *
R35/S *
Marking
R33
R34
R35
hFE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1
to
1.4
0
to
0.1
0.95
0.3
0.95
0.4
+0.1
0.05
0.4
+0.1
0.05
0.16
+0.1
0.06
0.65
+0.1
0.15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3583T1B | 制造商:NEC 功能描述:* 制造商:NEC 功能描述:Transistor 3k per reel |
| 2SC3583-T1B | 制造商:NEC 功能描述:Transistor 3k per reel 制造商:NEC Electronics Corporation 功能描述: |
| 2SC3583-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 10V 0.065A 3-Pin SC-59 T/R |
| 2SC3583-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3583-T1B-A(S) | 制造商:Renesas Electronics 功能描述:NPN |
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