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参数资料
| 型号： | 2SC3585 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/8页 |
| 文件大小： | 92K |
| 代理商： | 2SC3585 |
DATA SHEET
SILICON TRANSISTOR
2SC3585
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISOR
DATA SHEET
Document No. P10361EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984
DESCRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. The
2SC3585 features excellent power gain with very low-noise figures. The
2SC3585 employs direct nitride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values.
This allows
excellent associated gain and very wide dynamic range.
FEATURES
NF
1.8 dB TYP.
@f = 2.0 GHz
Ga
9 dB TYP.
@f = 2.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IC = 0
DC Current Gain
hFE *
50
100
250
VCE = 6 V, IC = 10 mA
Gain Bandwidth Product
fT
10
GHz
VCE = 6 V, IC = 10 mA
Feed-Back Capacitance
Cre **
0.3
0.8
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
6.0
8.0
dB
VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
10
dB
VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB
VCE = 6 V, IC = 5 mA, f = 2.0 GHz
*
Pulse Measurement PW
350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R43/Q *
R44/R *
R45/S *
Marking
R43
R44
R45
hFE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1
to
1.4
0
to
0.1
0.95
0.3
0.95
0.4
+0.1
0.05
0.4
+0.1
0.05
0.16
+0.1
0.06
0.65
+0.1
0.15
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3585-S | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3585-R | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3585-R45 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3588-ZM | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3588-ZL | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3585-A | 功能描述:RF TRANSISTOR NPN SOT-23 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:10GHz 噪声系数（dB，不同 f 时的典型值）:1.8dB @ 2GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 10mA，6V 电流 - 集电极（Ic）（最大值）:35mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:- 标准包装:1 |
| 2SC3585-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR |
| 2SC3585-T1B-A(R) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3585-T1B-A-S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3588-AZ(L) | 制造商:Renesas Electronics 功能描述:Bulk |
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