参数资料
型号: 2SC3620
元件分类: 功率晶体管
英文描述: 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-8H1A, 3 PIN
文件页数: 1/5页
文件大小: 130K
代理商: 2SC3620
2SC3620
2006-11-09
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3620
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
High breakdown voltage: VCEO = 300 V
Recommended for chroma output and driver applications for
line-operated TV horizontal.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
100
mA
Base current
IB
50
mA
Collector power dissipation
(Ta = 25°C)
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相关PDF资料
PDF描述
2SC3670-B 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3670 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3714 20 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC3786 3 A, 50 V, NPN, Si, POWER TRANSISTOR
2SC3807 2 A, 25 V, NPN, Si, POWER TRANSISTOR
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