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参数资料
| 型号： | 2SC3622-K |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 107K |
| 代理商： | 2SC3622-K |
1998
Document No. D16151EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SC3622, 3622A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
High VEBO:
VEBO: 12 V (2SC3622)
VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Ratings
Parameter
Symbol
2SC3622 2SC3622A
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
12
15
V
Collector current (DC)
IC(DC)
150
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 10 V, IC = 0
100
nA
DC current gain
hFE1 *VCE = 5.0 V, IC = 1.0 mA
1000
1800
3200
DC current gain
hFE2 *VCE = 5.0 V, IC = 100 mA
200
350
DC base voltage
VBE *VCE = 5.0 V, IC = 1.0 mA
560
mV
Collector saturation voltage
VCE(sat) *IC = 50 mA, IB = 5.0 mA
0.07
0.30
V
Base saturation voltage
VBE(sat) *IC = 50 mA, IB = 5.0 mA
0.8
1.2
V
Gain bandwidth product
fT
VCE = 5.0 V, IE =
10 mA
250
MHz
Output capacitance
Cob
VCB = 5 V, IE = 0, f = 1.0 MHz
3.0
pF
Turn-on time
ton
0.13
s
Storage temperature
tstg
0.72
s
Fall time
toff
VCC = 10 V, VBE(off) = –2.7 V
IC = 50 mA
IB1 =
IB2 = 1 mA
1.22
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
相关PDF资料 |
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| 2SC3622-L | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3622A-K | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3622 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3623-A | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3623-K(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3624A-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,50V,0.15A,MINI MOLD 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin Mini-Mold T/R |
| 2SC3624A-T1B-A(L15) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3624A-T1B-A(L16) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3624-T1B-A | 功能描述:TRANS NPN 50V 0.15A 制造商:renesas electronics america 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:150mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 5mA，50mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:1000 @ 1mA，5V 功率 - 最大值:200mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SC-59 标准包装:3,000 |
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