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参数资料
| 型号： | 2SC3623-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 4/4页 |
| 文件大小： | 139K |
| 代理商： | 2SC3623-A |
2SB1001
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–20
V
Collector to emitter voltage
V
CEO
–16
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–2
A
Collector peak current
i
C(peak) *
1
–3
A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–20
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–16
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.1
AV
CB = –16 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.1
AV
EB = –5 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V,
I
C = –0.1 A (Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.15
–0.3
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Base to emitter saturation
voltage
V
BE(sat)
—
–1.0
–1.2
V
I
C = –1 A,
I
B = –0.1 A (Pulse test)
Gain bandwidth product
f
T
—
150
—
MHz
V
CE = –2 V,
I
C = –10 mA
Collector output capacitance
Cob
—
50
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB1001 is grouped by h
FE as follows.
Mark
BH
BJ
h
FE
100 to 200
160 to 320
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3623-K(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3624A-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,50V,0.15A,MINI MOLD 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 0.15A 3-Pin Mini-Mold T/R |
| 2SC3624A-T1B-A(L15) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3624A-T1B-A(L16) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC3624-T1B-A | 功能描述:TRANS NPN 50V 0.15A 制造商:renesas electronics america 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:150mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 5mA，50mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:1000 @ 1mA，5V 功率 - 最大值:200mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SC-59 标准包装:3,000 |
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