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参数资料
| 型号： | 2SC3669-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 137K |
| 代理商： | 2SC3669-O |
2SC3669
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications
Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SA1429
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
1
A
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SC3669Y | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3672-O | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3672-R | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3672 | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3669-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 2A 3-Pin MSTM |
| 2SC3669-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 2A 3-Pin MSTM |
| 2SC3669-Y(T2OMI,FM | 功能描述:TRANS NPN 2A 80V SC71 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:1W 频率 - 跃迁:100MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:SC-71 供应商器件封装:MSTM 标准包装:1 |
| 2SC3669-Y,T2PASF(M | 功能描述:TRANS NPN 2A 80V SC71 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:1W 频率 - 跃迁:100MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:SC-71 供应商器件封装:MSTM 标准包装:1 |
| 2SC366GTM-Y | 制造商:Toshiba 功能描述:NPN Cut Tape |
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