参数资料
型号: 2SC3671-A
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7D101A, 3 PIN
文件页数: 1/4页
文件大小: 134K
代理商: 2SC3671-A
2SC3671
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3671
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A)
: hFE = 70 (min) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
High collector power dissipation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
VCES
40
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
5
Collector current
Pulse
(Note 1)
ICP
8
A
Base current
IB
0.5
A
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
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