参数资料
型号: 2SC3739-B12-TP
厂商: MICRO COMMERCIAL COMPONENTS
元件分类: 小信号晶体管
英文描述: 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: SOT-23, 3 PIN
文件页数: 1/2页
文件大小: 130K
代理商: 2SC3739-B12-TP
2SC3739
NPN Silicon
Epitaxial Transistors
Features
High Gain Bandwidth Product: fT=200 MHz (Min.)
Complementary to 2SA1464
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
500
mA
PC
Collector power dissipation
200
mW
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=40Vdc,IE=0)
---
100
nAdc
IEBO
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
---
100
nAdc
ON CHARACTERISTICS
hFE(1)
Forward Current Transfer ratio
(IC=150mAdc, VCE=1.0Vdc)
75
150
300
---
hFE(2)
Forward Current Transfer ratio
(IC=500mAdc, VCE=2.0Vdc)
20
75
---
VCE(sat)
Collector Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
0.25
0.75
Vdc
VBE(SAT)
Base Saturation Voltage
(IC=500mAdc,IB=50mAdc)
---
1.0
1.2
Vdc
Cob
Collector Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
---
3.5
8.0
pF
fT
Gain Bandwidth product
(VCE=10Vdc, IE=20mAdc)
200
400
---
MHz
ton
Turn-on Time
---
35
ns
tstg
Storage Time
---
225
ns
toff
Turn-off Time
VCC=30V,
IC=150mA
IB1=IB2=15mA
---
275
ns
hFE CLASSIFICATION
Marking
B12
B13
B14
hFE1
75-150
100-200
150-300
* Pulse Test PW<350us, duty cycle<2%
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
omponents
20736 Marilla
Street Chatsworth
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$% !"#
MCC
www.mccsemi.com
Revision: 2
2003/04/30
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