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参数资料
| 型号： | 2SC3807MP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封装： | MP, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 44K |
| 代理商： | 2SC3807MP |
2N6802
IRFF430
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
Document Number 5357
Issue: 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 1.5A
VGS = 10V
ID = 2.5A
VDS = VGS
ID = 250A
VDS > 15V
IDS = 1.5A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
VDS = 0.5BVDS
ID = 2.5A
ID =2.5A
VDS = 0.5BVDS
RG = 7.5
IS = 2.5A
VGS = 0
IF = 1.5A
TJ = 25°C
IF = 2.5A
TJ = 25°C
di / dt ≤ 100A/sVDD ≤ 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
500
0.43
1.5
1.725
24
1.5
25
250
100
–100
610
135
65
19.8
29.5
2.2
4.6
5.5
19.7
30
55
30
2.5
11
1.4
900
7.0
Negligible
V
V/ °C
V
S(
A
nA
pF
nC
ns
A
V
ns
C
BVDSS
BV
DSS
T
J
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
(
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3807MP-AE | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC3808 | 制造商:SANYO 功能描述:TRANS, NPN, 60V, 2A, TO-126 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS NPN 60V 2A TO-126 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126LP 80V 2A 20W ECB 制造商:Sanyo 功能描述:Trans GP BJT NPN 60V 2A 3-Pin TO-126LP |
| 2SC380TM | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9235V .05A .3W ECB |
| 2SC380TM-Y(F) | 制造商:Toshiba 功能描述:Trans GP BJT NPN 30V 0.05A 3-Pin TO-92 |
| 2SC381 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92 |
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