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参数资料
| 型号： | 2SC3840L |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/5页 |
| 文件大小： | 1265K |
| 代理商： | 2SC3840L |
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SILICON TRANSISTOR
2SC3840
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
HIGH SPEED HIGH VOLTAGE SWITCHING
DATA SHEET
Document No. D18456EJ1V0DS00 (1st edition)
Date Published November 2006 NS CP(K)
Printed in Japan
2006
DESCRIPTION
The 2SC3840 is designed for use in high speed and high voltage switching.
It is suitable for switching regulators, DC-DC converters and ultrasonic appliance applications.
FEATURES
High speed switching
High voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
600
V
Collector to Emitter Voltage
VCEO
600
V
Emitter to Base Voltage
VEBO
7.0
V
Collector Current (DC)
IC(DC)
1.0
A
Collector Current (pulse)
Note
IC(pulse)
2.0
A
Total Power Dissipation (TC = 25
°C)
PT
15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 300
μs, Duty Cycle ≤ 10%
PACKAGE DRAWING (Unit: mm)
相关PDF资料 |
PDF描述 |
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| 2SC3840M | 1 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC3841-P-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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