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参数资料
| 型号： | 2SC3944AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | SC-67, TO-220F-A1, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 198K |
| 代理商： | 2SC3944AP |
Power Transistors
1
Publication date: January 2003
SJD00117BED
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
■ Features
Excellent collector current I
C characteristics of forward current
transfer ratio hFE
High transition frequency f
T
A complementary pair with 2SA1535 and 2SA1535A, is optimum
for the driver stage of a 60 W to 100 W output amplifier
Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SC3944
VCBO
150
V
(Emitter open)
2SC3944A
180
Collector-emitter voltage 2SC3944
VCEO
150
V
(Base open)
2SC3944A
180
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power
TC = 25°CPC
15
W
dissipation
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SC3944
VCEO
IC
= 1 mA, I
B
= 0
150
V
(Base open)
2SC3944A
180
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current
2SC3944
ICBO
VCB
= 150 V, I
E
= 010
A
(Emitter open)
2SC3944A
VCB = 180 V, IE = 010
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
65
160
330
hFE2
VCE
= 5 V, I
C
= 500 mA
50
100
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
0.5
2.0
V
Base-emitter saturation voltage
VBE(sat)
IC = 500 mA, IB = 50 mA
1.0
2.0
V
Transition frequency
fT
VCE
= 10 V, I
C
= 50 mA, f = 10 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
50
pF
(Common base, input open circuited)
Rank
P
Q
R
S
hFE1
65 to 110
90 to 155
130 to 220
185 to 330
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3944AR | 1 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3944Q | 1 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3944P | 1 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3944R | 1 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC3953C | 0.2 A, 120 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3944AQ | 功能描述:TRANS NPN HF 180VCEO 1A TO-220F RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC3945 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-22OFA 300V .1A 40W BCE |
| 2SC3946 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-220FA 350V .2A 40W BCE |
| 2SC3950 | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
| 2SC3951 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO126ML80V .3A 8W ECB |
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