参数资料
型号: 2SC3963-Y
元件分类: 功率晶体管
英文描述: 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR
文件页数: 1/5页
文件大小: 156K
代理商: 2SC3963-Y
2SC3963
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3963
High-Voltage General Amplifier Applications
Color TV Class B Sound Output Applications
High voltage: VCEO = 160 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
Base current
IB
100
mA
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相关PDF资料
PDF描述
2SC3963 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC3969A 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SC3969 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SC3969B 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220FP
2SC3969/B 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220FP
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2SC3974 功能描述:TRANS NPN 500VCEO 7A TOP-3F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR