参数资料
型号: 2SC3963
元件分类: 功率晶体管
英文描述: 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-8H1A, 3 PIN
文件页数: 1/5页
文件大小: 133K
代理商: 2SC3963
2SC3963
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3963
High-Voltage General Amplifier Applications
Color TV Class B Sound Output Applications
High voltage: VCEO = 160 V
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
Base current
IB
100
mA
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 200 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
A
hFE (1)
(Note)
VCE = 10 V, IC = 50 mA
100
320
DC current gain
hFE (2)
VCE = 10 V, IC = 150 mA
80
Collector-emitter saturation voltage
VCE (sat)
IC = 200 mA, IB = 20 mA
1.0
V
Base-emitter voltage
VBE
VCE = 10 V, IC = 5 mA
0.55
0.65
0.75
V
Transition frequency
fT
VCE = 10 V, IC = 50 mA
50
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
Note: hFE (1) classification O: 100 to 200, Y: 160 to 320
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相关PDF资料
PDF描述
2SC3963-O 0.2 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC3988M 25 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-218
2SC3988L 25 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-218
2SC3988 25 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-218
2SC3988L 25 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-218
相关代理商/技术参数
参数描述
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2SC3970 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FA 800V 1.5A 25W BCE
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