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参数资料
| 型号： | 2SC4015TV2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | AVT, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 76K |
| 代理商： | 2SC4015TV2 |
2SC4061K / 2SC3415S / 2SC4015
Transistors
Rev.A
2/3
Electrical characteristics curves
100
60
40
20
0
02
4
6
8
10
80
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.1 Ground emitter output
characteristics (
Ι )
Ta
=25°C
IB
=0.2mA
0.4mA
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
0.6mA
0.8mA
1.0mA
100
60
40
20
0
04
8
12
16
20
80
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.2 Ground emitter output
characteristics (
ΙΙ )
Ta
=25°C
IB
=0.2mA
0.4mA
0.6mA
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
0.8mA
1.0mA
200
400
600
800
1000
1200
1400
1600
200
100
20
10
2
1
0.5
5
50
BASE TO EMITTER VOLTAGE : VBE (mV)
COLLECTOR
CURRENT
:
I
C
(mA)
Fig.3 Ground emitter propagation
characteristics
VCE
=10V
Ta=100
°C
25
°C
25
°C
5
10
20
50
100
500
200
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
Fig.4 DC current gain
vs. collector current (
Ι )
Ta
=25°C
VCE
=10V
5V
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
Fig.5 DC current gain
vs. collector current (
ΙΙ )
5
2
10
20
50
100
500
200
0.2
0.5 1
2
5 10
20
50 100
VCE
=10V
Ta
=100°C
25
°C
25°C
0.02
0.05
0.1
0.2
0.5
1
2
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT : IC (mA)
DC
CURRENT
GAIN
:
h
FE
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta
=25°C
IC/IB
=10
5
10
2
1
0.5
5
20
1
2
5
10
20
50
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
Fig.9 Collector output capacitance
vs. collector-base voltage
Ta
=25°C
f
=1MHz
IE
=0A
0.02
0.05
0.1
0.2
0.5
1
2
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT : IC (mA)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
IC/IB
=10
Ta
=25°C
Ta
=100°C
25
°C
25
°C
100
°C
25°C
VBE(sat)
VCE(sat)
100
20
10
5
50
200
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
TRANSITION
FREQUWNCY
:
f
T
(MHZ)
Fig.8 Gain bandwidth product
vs. emitter current
Ta
=25°C
VCE
=30
10V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4015TV2N | 功能描述:两极晶体管 - BJT NPN 300V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4016 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 500MA I(C) | SIP |
| 2SC4017 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FTL40V .3A .3W ECB |
| 2SC4018K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23VAR |
| 2SC4018KN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23VAR |
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