参数资料
型号: 2SC4027-R
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 1.5 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: TP, 3 PIN
文件页数: 1/5页
文件大小: 44K
代理商: 2SC4027-R
2SA1552 / 2SC4027
No.2262-1/5
Applications
Converters, inverters, color TV audio output.
Features
Adoption of FBET, MBIT processes.
High voltage and large current capacity.
Fast switching time.
Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact.
Specifications ( ) : 2SA1552
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)180
V
Collector-to-Emitter Voltage
VCEO
(--)160
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)1.5
A
Collector Current (Pulse)
ICP
(--)2.5
A
Collector Dissipation
PC
1W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)120V, IE=0A
(--)1.0
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1.0
A
DC Current Gain
hFE1VCE=(--)5V, IC=(--)100mA
100*
400*
hFE2VCE=(--)5V, IC=(--)10mA
80
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(22)12
pF
* ; The 2SA1552 / 2SC4027 are classified by 100mA hFE as follws:
Continued on next page.
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN2262C
D0505CB MS IM X-0448 / 53002RM (KT) / 72098HA (KT) / 8109MO / 5137TA, TS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA1552 / 2SC4027
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Applications
相关PDF资料
PDF描述
2SC4027-TL 1.5 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SA1552-S 1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1552-T 1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SC4050KIDUR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4050KIEUL 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC4027S 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-252
2SC4027S-E 功能描述:两极晶体管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4027S-H 功能描述:两极晶体管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4027S-TL-E 功能描述:两极晶体管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4027S-TL-H 功能描述:两极晶体管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2