参数资料
型号: 2SC4054
元件分类: 功率晶体管
英文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封装: ITO-220, 3 PIN
文件页数: 1/12页
文件大小: 388K
代理商: 2SC4054
Unit : mm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Case : ITO-220
FX Series
Switching Power Transistor
5A NPN
2SC4054
(TP5V45FX)
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55`150
Junction Temperature
Tj
150
Collector to Base Voltage
VCBO
600
V
Collector to Emitter Voltage
VCEO
450
V
VCEX
VEB = 5V
600
Emitter to Base Voltage
VEBO
7V
Collector Current DC
IC
5A
Collector Current Peak
ICP
10
Base Current DC
IB
2
A
Base Current Peak
IBP
4
Total Transistor Dissipation
PT
Tc = 25
30
W
Dielectric Strength
Vdis
Terminals to case, AC 1 minute
2
kV
Mounting Torque
TOR
0.5
Nm
Electrical Characteristics (Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Collector to Emitter Sustaining Voltage
VCEO(sus)
IC = 0.1A
Min 450
V
Collector Cutoff Current
ICBO
At rated Voltage
Max 0.1
mA
ICEO
Max 0.1
Emitter Cutoff Current
IEBO
At rated Voltage
Max 0.1
mA
DC Current Gain
hFE
VCE = 5V, IC = 2.5A
Min 10
hFEL
VCE = 5V, IC = 1mA
Min 5
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 2.5A
Max 1.0
V
Base to Emitter Saturation Voltage
VBE(sat)
IB = 0.5A
Max 1.5
V
Thermal Resistance
jc
Junction to case
Max 4.16 /W
Transition Frequency
fT
VCE = 10V, IC = 0.5A
STD 20
MHz
Turn on Time
ton
IC = 2.5A
Max 0.5
Storage Time
ts
IB1 = 0.5A, IB2 = 1A
Max 2.0
s
Fall Time
tf
RL = 60, VBB2 = 4V
Max 0.2
相关PDF资料
PDF描述
2SC4057 8 A, 450 V, NPN, Si, POWER TRANSISTOR
2SC4061KT146MN 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4061KT146/MP 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4061KT146M 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4061KT146/NP 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC4054-7000 功能描述:两极晶体管 - BJT VCEO=450 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4054-7012 功能描述:两极晶体管 - BJT VCEO=450 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4054-7100 功能描述:两极晶体管 - BJT VCEO=450 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4054-7112 功能描述:两极晶体管 - BJT VCEO=450 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4055 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors