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参数资料
| 型号： | 2SC4081SP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-323, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 273K |
| 代理商： | 2SC4081SP |
2SC4081
NPN Silicon
Epitaxial Transistors
Features
Low Cob . Cob=2.0pF(Typ.)
Complementary to 2SC1576A
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
150
mA
PC
Collector power dissipation
200
mW
TJ
Junction Temperature
150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25℃ Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=-60Vdc)
---
100
nAdc
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc)
---
100
nAdc
ON CHARACTERISTICS
BVCBO
Collector-base breakdown voltage
(IC=-50Adc )
60
---
Vdc
BVCEO
Collector-emitter
breakdown
voltage (IC=-1Adc)
50
---
Vdc
BVEBO
Emitter-base breakdown voltage
(IE=-50Adc)
6
---
Vdc
hFE
DC Current Gain
(IC=-1mAdc, VCE=-6.0Vdc)
120
---
560
---
VCE(sat)
Collector Saturation Voltage*
(IC=-50mAdc, IB=-5.0mAdc)
---
0.4
Vdc
Cob
Output Capacitance
(VCB=-12.0Vdc, IE=0, f=1.0MHz)
---
2.0
3.5
pF
fT
Gain Bandwidth product
(VCE=-12Vdc, IE=2mAdc,f=30MHz)
---
180
---
MHz
hFE CLASSIFICATION
Marking
Q
R
S
hFE
120~270
180~390
270~560
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 1
2003/11/28
SOT-323
Suggested Solder
Pad Layout
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
A
C
B
D
E
F
G
H
J
1.90
0.70
0.90
0.65
DIMENSIONS
S
G
D
K
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4081T106 | 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4081T106Q | 功能描述:两极晶体管 - BJT NPN 50V 0.15A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4081T106Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, General Purpose, 50V, |
| 2SC4081T106R | 功能描述:两极晶体管 - BJT NPN 50V 0.15A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4081T106S | 功能描述:两极晶体管 - BJT NPN 50V 150MA SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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