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参数资料
| 型号： | 2SC4081UB-Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | UMT3F, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 159K |
| 代理商： | 2SC4081UB-Q |
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2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
General purpose small signal amplifier
(50V, 0.15A)
2SC4081UB
Applications
Dimensions (Unit : mm)
General purpose small signal amplifier
Features
1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA4081.
Structure
NPN silicon epitaxial planar transistor
Absolute maximum (Ta=25
°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
PD
ICP
Tj
Tstg
60
V
mA
mW
mA
1
1 Pw=1ms Single pulse
2 Each terminal mounted on a recommended land
2
°C
50
7
150
IC
200
150
55 to +150
Symbol
Limits
Unit
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
60
50
7
82
180
2.0
100
560
400
3.5
VIC
=50A
IC
=1mA
IE
=50A
VCB
=60V
VEB
=7V
VCE
=6V, IC=1mA
IC/IB
=50mA/5mA
VCE
=12V, IE=2mA, f=100MHz
VCB
=12V, IE=0A, f=1MHz
V
nA
mV
MHz
pF
Typ.
Max.
Unit
Conditions
hFE rank categories
Rank
PQ
82 to 180
120 to 270
hFE
R
180 to 390
S
270 to 560
UMT3F
Each lead has same dimensions
2.0
0.32
0.65 0.65
1.3
2.1
1.25
0.425
(1)
(2)
(3)
0.9
0.53
0.13
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : B
= Denotes hFE
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| 2SC4081UB-S | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4081UBTLP | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4081UBTLQ | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 50V 150MA UMT3F |
| 2SC4081UBTLR | 功能描述:两极晶体管 - BJT GP NPN Trans 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4081W | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SC4081XT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:SOT-323 Plastic-Encapsulate Transistors |
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