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参数资料
| 型号： | 2SC4094-RCF |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-4 |
| 文件页数： | 1/8页 |
| 文件大小： | 95K |
| 代理商： | 2SC4094-RCF |
DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1987
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity.
This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IC = 0
DC Current Gain
hFE
50
250
VCE = 8V, IC = 20 mA
Gain Bandwidth Product
fT
9
GHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Feed-Back Capacitance
Cre
0.25
0.8
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
13
15
dB
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
17
dB
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.0
dB
VCE = 8 V, IC = 7 mA, f = 1.0 GHz
hFE Classification
Class
R36/RCF *
R37/RCG *
R38/RCH *
Marking
R36
R37
R38
hFE
50 to 100
80 to 160
125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
°
5
°
5
°
5
°
0
to
0.1
0.8
2.9±0.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
0.1
0.16
+0.1
0.06
0.4
4
1
3
2
+0.1
0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
0.6
+0.1
0.05
0.4
+0.1
0.05
0.4
+0.1
0.05
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4094-R36 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4094-R38-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4094-RCG-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4094-R37-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4094-R38-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4094RCG | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR |
| 2SC4094RCH | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-143RVAR |
| 2SC4094-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:9GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 1GHz 增益:13.5dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 7mA，3V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:TO-253-4，TO-253AA 供应商器件封装:SOT-143 标准包装:1 |
| 2SC4094-T1-A(RCG) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4094-T1-A(RCH) | 制造商:Renesas Electronics Corporation 功能描述: |
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