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参数资料
| 型号： | 2SC4096 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 176K |
| 代理商： | 2SC4096 |
1
Power Transistors
2SC4096
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1400
800
7
15
10
5
150
3.5
150
–55 to +150
Unit
V
A
W
C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 1400V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 5A
IC = 5A, IB = 1A
VCE = 5V, IC = 1A, f = 1MHz
IC = 5A, IB1 = 1A, IB2 = –2A,
VCC = 250V
min
800
5
typ
13
1.0
3.5
0.3
max
100
15
5
1.5
Unit
A
V
MHz
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
6.0
10.0
26.0
±0.5
20.0
±0.5
1.5
2.5
Solder
Dip
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
4.0
2.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
2.0
φ 3.3±0.2
3.0
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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