参数资料
型号: 2SC4116-BL
元件分类: 小信号晶体管
英文描述: 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: USM, 2-2E1A, SC-70, 3 PIN
文件页数: 1/4页
文件大小: 172K
代理商: 2SC4116-BL
2SC4116
2003-03-27
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4116
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE: hFE = 70~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1586
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
mA
DC current gain
(Note)
hFE
(Note)
VCE = 6 V, IC = 2 mA
70
700
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.0
3.5
pF
Noise figure
NF
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kW,
1.0
10
dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700, ( ) marking symbol
Marking
Unit: mm
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
相关PDF资料
PDF描述
2SC4116 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4116-GR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4116-O 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4116-Y-TP 150 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4116-GR-TP 150 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC4116-BL(T5LHITF 制造商:Toshiba America Electronic Components 功能描述:
2SC4116-BL(TE85L,F 制造商:Toshiba 功能描述:NPN
2SC4116-BL,LF 功能描述:TRANS NPN 50V 0.15A USM 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带(CT) 零件状态:有效 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):150mA 电压 - 集射极击穿(最大值):50V 不同?Ib,Ic 时的?Vce 饱和值(最大值):250mV @ 10mA,100mA 电流 - 集电极截止(最大值):100nA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):350 @ 2mA,6V 功率 - 最大值:100mW 频率 - 跃迁:80MHz 安装类型:表面贴装 封装/外壳:SC-70,SOT-323 供应商器件封装:USM 标准包装:1
2SC4116BLTE85LF 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN USM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT NPN 0.15A IC 50V Gen Purp Trans
2SC4116GR 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70