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参数资料
| 型号： | 2SC4176B34 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPER MINIMOLD, SC-70, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 782K |
| 代理商： | 2SC4176B34 |
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SILICON TRANSISTOR
2SC4176
HIGH SPEED SWITCHING
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D19099EJ2V0DS00 (2nd edition)
(Previous No. TC-2104)
Date Published January 2008 NS
Printed in Japan
1987, 2008
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
High-speed switching
Low collector saturation voltage
High gain bandwidth product
Low collector capacitance
Can be used complementary to the 2SA1610.
Small Package: 3-pin Super Small Package (SC-70)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°C)
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCES
40
V
VCEO
15
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current
IC
200
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
ELECTRICAL CHRACTERISTICS (Ta = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 A
0.1
μA
Emitter Cut-off Current
IEBO
VEB = 3.0 V, IC = 0 A
0.1
μA
DC Current Gain
hFE
VCE = 1.0 V, IC = 10 mA
40
90
200
Collector Saturation Voltage
VCE(sat)
IC = 10 mA, IB = 1.0 mA
0.15
0.25
V
Base Saturation Voltage
VBE(sat)
IC = 10 mA, IB = 1.0 mA
0.80
0.85
V
Gain Bandwidth Product
fT
VCE = 10 V, IE =
10 mA
500
750
MHz
Collector Capacitance
Cob
VCB = 5.0 V, IE = 0 A, f = 1.0 MHz
1.8
4.0
pF
Turn-on Time
ton
8.0
12
ns
Storage Time
tstg
6.0
13
ns
Turn-off Time
toff
(When tstg, IB1 =
IB2 = 10 mA)
See Test Circuits
12
18
ns
hFE Classification
Marking
B33
B34
B35
hFE
40 to 80
60 to 120
100 to 200
PACKAGE DRAWING (Unit: mm)
2.1±0.1
1.25±0.1
0.65
0.3
0.65
2.0±0.2
0.9±0.1
0
to
0.1
0.15
+0.1 –0.05
2
1
3
+0.1
–0
0.3
+0.1 –0
0.3
Marking
1. Emitter
2. Base
3. Collector
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4176-A | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4176B33 | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4176B35 | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4179-T2FA3 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4179-T1 | 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4176B35 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SC4176-T1-A(B35) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4176-T1-A-B33 | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4177 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN Silicon Epitaxia |
| 2SC4177L4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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