参数资料
型号: 2SC4197TI-TL-E
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: MPAK-3
文件页数: 1/5页
文件大小: 236K
代理商: 2SC4197TI-TL-E
2SC5029
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A)
High collector power dissipation: PC = 1.3 W
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SA1892
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
0.2
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
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