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参数资料
| 型号： | 2SC4226-T1R23-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPER MINIMOLD, SC-70, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 105K |
| 代理商： | 2SC4226-T1R23-A |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC4226
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN SUPER MINIMOLD
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1993, 2003
Document No. PU10450EJ01V0DS (1st edition)
(Previous No. P10368EJ3V0DS00)
Date Published December 2003 CP(K)
Printed in Japan
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
package.
FEATURES
Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
High gain :
S21e2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
3-pin super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC4226
50 pcs (Non reel)
8 mm wide embossed taping
2SC4226-T1
3 kpcs/reel
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4226-T1R24 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4226-R23-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4226-R23 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4226-T1R23 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4226-R25-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4226T2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-323 |
| 2SC4226W | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:NPN Silicon Epitaxial Planar Transistor |
| 2SC4227 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
| 2SC4227(NE68130) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC4227-A | 功能描述:RF TRANSISTOR NPN SOT-323 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:7GHz 噪声系数（dB，不同 f 时的典型值）:1.4dB @ 1GHz 增益:12dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:40 @ 7mA，3V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商器件封装:SC-70 标准包装:1 |
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