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参数资料
| 型号： | 2SC4226-T2R24-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-70, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 48K |
| 代理商： | 2SC4226-T2R24-A |
2
2SC4226
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IC = 0
DC Current Gain
hFE
40
110
250
VCE = 3 V, IC = 7 mA*1
Gain Bandwidth Product
fT
3.0
4.5
GHz
VCE = 3 V, IC = 7 mA
Feed back Capacitance
Cre
0.7
1.5
pF
VCE = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
79
dB
VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure
NF
1.2
2.5
dB
VCE = 3 V, IC = 7 mA, f = 1 GHz
*1
Pulse Measurement ; PW
≤ 350
s, Duty Cycle ≤ 2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
R23
R24
R25
Marking
R23
R24
R25
hFE
40 to 80
70 to 140
125 to 250
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4226-T2R24-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4226-T2R25-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4226-T2R24 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4227-T1 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4227-T2R34 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4226W | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:NPN Silicon Epitaxial Planar Transistor |
| 2SC4227 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD |
| 2SC4227(NE68130) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC4227-A | 功能描述:RF TRANSISTOR NPN SOT-323 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:7GHz 噪声系数（dB，不同 f 时的典型值）:1.4dB @ 1GHz 增益:12dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:40 @ 7mA，3V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商器件封装:SC-70 标准包装:1 |
| 2SC4227-T1 | 制造商:NEC Electronics Corporation 功能描述:NE68130-T1-R35 |
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