- 您现在的位置：买卖IC网 > PDF目录33399 > 2SC4253 Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC4253 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2E1A, SC-70, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 570K |
| 代理商： | 2SC4253 |
2SC4253
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4253
TV Final Picture IF Amplifier Applications
Good linearity of fT
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
50
mA
Base current
IB
25
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 3 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
25
V
DC current gain
hFE
VCE = 10 V, IC = 10 mA
20
70
200
Collector-emitter
VCE (sat)
0.2
Saturation voltage
Base-emitter
VBE (sat)
IC = 15 mA, IB = 1.5 mA
1.5
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.1
1.6
pF
Collector-base time constant
Ccrbb’
VCB = 10 V, IC = 1 mA, f = 30 MHz
25
ps
Transition frequency
fT
VCE = 10 V, IC = 10 mA
250
600
MHz
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4255TE85L | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SC4255 | RF SMALL SIGNAL TRANSISTOR |
| 2SC4259UI-UL | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4259UI-TL | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4259 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4253_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
| 2SC4255 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-5920V .03A .15W ECB SURFACE MT |
| 2SC4256 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
| 2SC4257 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Voltage Amp, High-Voltage Switching Applications |
| 2SC4258 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
发布紧急采购，3分钟左右您将得到回复。