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参数资料
| 型号： | 2SC4262 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | CMPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SC4262 |
2SC4262
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
20
V
Collector to emitter voltage
V
CEO
15
V
Emitter to base voltage
V
EBO
3V
Collector current
I
C
50
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
——V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
——V
I
C = 1 mA, RBE = ∞
Collector cutoff current
I
CBO
—
0.5
AV
CB = 15 V, IE = 0
Emitter cutoff current
I
EBO
—
1.0
AV
EB = 3 V, IC = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
V
I
C = 20 mA, IB = 4 mA
DC current transfer ratio
h
FE
50
—
200
V
CE = 10 V, IC = 5 mA
Collector output capacitance
Cob
—
1.0
pF
V
CB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product
f
T
1.4
2.9
—
GHz
V
CE = 10 V, IC = 5 mA
See characteristic curves of 2SC3793.
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| 2SC4306TL | 8000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4262IP-TL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4263 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SC4264 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC4264GCTR-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4265 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
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