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参数资料
| 型号： | 2SC4331K |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 269K |
| 代理商： | 2SC4331K |
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SILICON POWER TRANSISTOR
2SC4331,4331-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Document No. D16136EJ3V0DS00 (3rd edition)
Date Published January 2007 NS CP(K)
Printed in Japan
The 2SC4331 and 2SC4331-Z are mold power transistors developed for
high-speed switching and features a very low collector-to-emitter saturation
voltage.
This transistor is ideal for use in switching regulators, DC/DC converters,
motor drivers, solenoid drivers, and other low-voltage power supply devices,
as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead-processed product and is deal for mounting a hybrid IC.
Low collector saturation voltage
VCE(sat) = 0.3 V MAX. (IC = 3.0 A)
Fast switching speed:
tf
≤ 0.4
μs MAX. (IC = 3.0 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
7.0
V
Collector Current (DC)
IC(DC)
5.0
A
Collector Current (pulse)
Note 1
IC(pulse)
10
A
Base Current (DC)
IB(DC)
2.5
A
Total Power Dissipation (TC = 25
°C)
PT1
15
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
Note 2, 2.0 Note 3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, duty cycle ≤ 50%
2. Printing board mounted
3. 7.5 cm
2 × 0.7 mm, ceramic board mounted
PACKAGE DRAWING (Unit: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
Electrode Connectio
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
TO-251 (MP-3)
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4331-ZK | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SC4331-Z | 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SC4336K | 10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC4336M | 10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC4336 | 10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4331-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4331-L-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4331-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 100V 5A 3-Pin(2+Tab) TO-252 |
| 2SC4331-Z-AZ-K | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4332-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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