参数资料
型号: 2SC4331M
元件分类: 小信号晶体管
英文描述: 5000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251AA
封装: TO-251, MP-3, 3 PIN
文件页数: 4/7页
文件大小: 269K
代理商: 2SC4331M
Data Sheet D16136EJ3V0DS
2
2SC4331,4331-Z
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 2.5 A, IB = 0.25 A, L = 1 mH
100
V
Collector to emitter voltage
VCEX(SUS)
IC = 2.5 A, IB1 =
IB2 = 0.25 A,
VBE(OFF) =
1.5 V, L = 180
μH, clamped
100
V
Collector cutoff current
ICBO
VCE = 100 V, IE = 0
10
μA
Collector cutoff current
ICER
VCE = 100 V, RBE = 50
Ω, TA = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) =
1.5 V
10
μA
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) =
1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
μA
DC current gain
Note
hFE1
VCE = 2.0 V, IC = 0.5 A
100
DC current gain
Note
hFE2
VCE = 2.0 V, IC = 1.0 A
100
200
400
DC current gain
Note
hFE3
VCE = 2.0 V, IC = 3.0 A
60
Collector saturation voltage
Note
VCE(sat)1
IC = 3.0 A, IB = 0.15 A
0.3
V
Collector saturation voltage
Note
VCE(sat)2
IC = 4.0 A, IB = 0.2 A
0.5
V
Base saturation voltage
Note
VBE(sat)1
IC = 3.0 A, IB = 0.15 A
1.2
V
Base saturation voltage
Note
VBE(sat)2
IC = 4.0 A, IB = 0.2 A
1.5
V
Collector capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
60
pF
Gain bandwidth product
fT
VCE = 10 V, IE =
0.5 A
150
MHz
Turn-on time
ton
0.3
μs
Storage time
tstg
1.5
μs
Fall time
tf
IC = 3.0 A, RL = 17
Ω,
IB1 =
IB2 = 0.15 A, VCC 50 V
Refer to the test circuit.
0.4
μs
Note Pulse test PW
≤ 350
μs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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