- 您现在的位置：买卖IC网 > PDF目录30556 > 2SC4499(L) SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC4499(L) |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | DPAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 40K |
| 代理商： | 2SC4499(L) |
2SC4499(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
0.5
A
Collector peak current
I
C(peak)
1.0
A
Collector power dissipation
P
C
0.75
W
P
C*
1
10
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
—
V
I
C = 0.1 A, RBE = ∞
L = 100 mH
Emitter to base breakdown
voltage
V
(BR)EBO
10
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CBO
——
20
AV
CB = 400 V, IE = 0
I
CEO
—
50
V
CE = 350 V, RBE = ∞
DC current transfer ratio
h
FE1
12
—
V
CE = 5 V, IC = 0.25 A*
1
h
FE2
5—
—
V
CE = 5 V, IC = 0.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.0
V
I
C = 0.25 A, IB = 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
—
1.5
V
I
C = 0.25 A, IB = 0.05 A*
1
Turn on time
t
on
—
1.0
sI
C = 0.5 A, IB1 = –IB2 = 0.1 A,
Storage time
t
stg
—
2.0
sV
CC 150 V
Fall time
t
f
—
1.0
s
Note:
1. Pulse test.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4499(L) | SMALL SIGNAL TRANSISTOR |
| 2SC4499(L) | SMALL SIGNAL TRANSISTOR |
| 2SC4536-QQ-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4536-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC454-D | SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4500L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4500-S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4505T100 | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR NPN 2SC4505 MPT3 |
| 2SC4505T100P | 功能描述:两极晶体管 - BJT NPN 400V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4505T100Q | 功能描述:两极晶体管 - BJT NPN 400V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。