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参数资料
| 型号： | 2SC4550-K-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 135K |
| 代理商： | 2SC4550-K-AZ |
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1998
Document No. D15596EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4550
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4550 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High hFE and low VCE(sat):
hFE
≥ 100 (VCE = 2 V, IC = 1.5 A)
VCE(sat)
≤ 0.3 V (IC = 4 A, IB = 0.2 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (pulse)
IC(pulse)*14
A
Base current (DC)
IB(DC)
3.5
A
Total power dissipation
PT (Tc = 25
°C)
30
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4550-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4551-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,10A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 10A 3-Pin(3+Tab) MP-45F |
| 2SC4551-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC4551AZ-K | 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC4551-M-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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