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参数资料
| 型号： | 2SC4568-GB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 107K |
| 代理商： | 2SC4568-GB |
SILICON TRANSISTOR
2SC4568
NPN SILICON EPITAXIAL TRANSISTOR
UHF TV TUNER OSC/MIXER
DATA SHEET
Document No. PU10035EJ01V0DS (1st edition)
(Previous No. P10373EJ2V1DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Corporation 1989
NEC Compound Semiconductor Devices 2001
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
DESCRIPTION
The 2SC4568 is an NPN silicon epitaxial transistor intended for use as
UHF oscillator and UHF mixer in a tuner of TV rceiver.
FEATURES
High gain bandwidth product
fT = 5.5 GHz TYP.
Low output capacitance
Cob = 0.7 pF TYP.
Surface mount package
EIAJ: SC-59
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Maximum Voltages and Current
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
55 to +125
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
AVCB = 15 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
AVEB = 1 V, IC = 0
Collector Saturation Voltage
VCE(sat)
0.5
V
hFE = 10, IC = 5 mA
DC Current Gain
hFE
40
100
200
VCE = 5 V, IC = 5 mA *1
Gain Bandwidth Product
fT
5.5
GHz
VCE = 5 V, IC = 5 mA, f = 1.0 GHz
Output Capacitance
Cob
0.7
0.9
pF
VCB = 5 V, IE = 0, f = 1.0 MHz
Insertion Gain
S21e
2
5.0
dB
VCE = 5 V, IC = 5 mA, f = 1.0 MHz
*1 Pulsed: PW = 35
S, Duty Cycle ≤ 2 %
hFE Classification
Class
T72/EB *
T73/FB *
T74/GB *
Marking
T72
T73
T74
hFE
40 to 80
60 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1
to
1.4
0
to
0.1
0.95
0.3
0.95
0.4
+0.1
0.05
0.4
+0.1
0.05
0.16
+0.1
0.06
0.65
+0.1
0.15
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4568-T74 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4568 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4568-EB | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4568-T72 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4568-T74 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4570-T1-A(T73) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4571-T1-A-T76 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4572-RA7 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC458 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4580-7100 | 功能描述:两极晶体管 - BJT VCEO=450 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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