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参数资料
| 型号： | 2SC458KCTZ-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43A, TO-92(1), 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 178K |
| 代理商： | 2SC458KCTZ-E |
2SC458(K)
Rev.2.00 Aug 10, 2005 page 5 of 7
Base to Emitter Saturation Voltage vs.
Collector Current
Collector Current IC (mA)
Base
to
Emitter
Saturation
Voltage
V
BE
(sat)
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
100
110
520
50
2
IC = 10 IB
Ta = 75°
C
–25
25
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
Ta = 25
°C
–50
Collector Current IC (mA)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
1
5
20
100
10
50
2
Gain Bandwidth Product vs.
Collector Current
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
VCE = 10 V
500
400
300
200
100
0
0.5
2
10
1.0
5
20
Input and Output Capacitance vs.
Voltage
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
Collector
output
Capacitance
C
ob
(pF)
Emitter
Input
Capacitance
C
ib
(pF)
8
7
6
5
4
3
2
0.3
1.0
10
330
f = 1 MHz
C
ib (I
C =
0)
C
ob (I
E
= 0)
Switching Time vs. Collector Current
Collector Current IC (mA)
Switching
Time
t
(
s)
VCC = 10.3 V
IC = 10 IB1 = –10 IB2
1.0
0.5
0.2
0.1
0.05
0.02
0.01
15
20
100
210
50
toff
tstg
ton
td
h Parameter vs. Collector Current
Collector Current (mA)
Percentage
of
Relative
to
I
C
=
0.1
mA
VCE = 6 V
f = 270 Hz
100
50
20
10
5
2
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.5
0.2
5
2
1.0
10
0.1
0.05
0.02
hie
hfe
hre
hie
hoe
hre
hfe
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PDF描述 |
|---|---|
| 2SC458KCTZ-E | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC458LG | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9230V .1A .2W ECB |
| 2SC459 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9230V .1A .2W ECB |
| 2SC4591XM(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SC460 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC4604(F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Bulk |
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